savantic semiconductor product specification silicon npn power transistors 2SC3571 description with to-220fa package low collector saturation voltage high switching speed applications switching regulator dc-dc converter high frequency power amplifier pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 7 a i cm collector current-peak 15 a i b base current 3.5 a p t total power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220fa) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3571 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =3.0a , i b =0.6a,l=1mh 400 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =0.6a 1.2 v i cbo collector cut-off current v cb =400v; i e =0 10 a i cex collector cut-off current v ce =400v; v be =-1.5v ta=125 10 1.0 a ma i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.1a ; v ce =5v 20 80 h fe -2 dc current gain i c =1a ; v ce =5v 20 80 h fe -3 dc current gain i c =3a ; v ce =5v 10 switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =3.0a;i b1 =-i b2 =0.6a v cc a 150v; r l =50 c 1.0 s h fe-2 classifications m l k 20-40 30-60 40-80
savantic semiconductor product specification 3 silicon npn power transistors 2SC3571 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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